Fig. 4: InGaAs/InP SAM-APD.

a device structure, b energy band profile, and electric field under normal reverse bias condition. Al_xIn_1–xAs_ySb_1–y based SACM APD: c detector’s design with the E distribution within the detector, d measured and theoretically simulated gain, dark current, photocurrent versus reverse voltage for 90 μm diameter device at room temperature³⁹. InAs planar avalanche photodiode: e a schematic design diagram, f comparison of the gain reached by 1550 nm wavelength laser^132,133. The M normalized dark current for 100 μm radius planar APD was presented for 200 K