Fig. 2: TEM characterization of the epitaxial structure grown on InP and InPOS. | Light: Science & Applications

Fig. 2: TEM characterization of the epitaxial structure grown on InP and InPOS.

From: High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate

Fig. 2

Cross-sectional TEM images of AlGaInAs MQW laser structures on (a) bulk InP and (b) InPOS. STEM images of entire MQW structures on (c) bulk InP and (e) InPOS. The amplified QW structures on (d) bulk InP and (f) InPOS

Back to article page