Fig. 5: Performance of lasers on InP and InPOI at different temperatures. | Light: Science & Applications

Fig. 5: Performance of lasers on InP and InPOI at different temperatures.

From: High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate

Fig. 5

L-I characteristics for the 8 µm×1500 μm laser on the bulk InP under (a) CW and (b) pulsed modes at different temperatures. c Temperature dependence of the threshold current for laser on the bulk InP. L-I characteristics for the 8 µm × 1500 μm laser on the InPOS under (d) CW and (e) pulsed modes at different temperatures. f Temperature dependence of the threshold current for laser on the InPOS

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