Fig. 6: Characterization of wavelength shift for lasers on InP and InPOS with increasing temperature. | Light: Science & Applications

Fig. 6: Characterization of wavelength shift for lasers on InP and InPOS with increasing temperature.

From: High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate

Fig. 6

Lasing spectra for 8 µm × 1500 μm lasers on (a) bulk InP and (b) InPOS under CW mode at different temperatures. c Temperature dependence of the lasing wavelength for lasers on the bulk InP and InPOS under CW mode. Lasing spectra for 8 µm × 1500 μm lasers on (d) bulk InP and (e) InPOS under pulsed mode at different temperatures. f Temperature dependence of the lasing wavelength for lasers on the bulk InP and InPOS under pulsed mode

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