Fig. 4: Measurement of the thickness and refractive index of SiO2 thin films. | Light: Science & Applications

Fig. 4: Measurement of the thickness and refractive index of SiO2 thin films.

From: Metasurface array for single-shot spectroscopic ellipsometry

Fig. 4

Comparison between the reconstructed full Stokes polarization spectra from the single-shot spectroscopic ellipsometer (blue solid line) and the ground truth (red dashed line) for SiO2 thin film with a thickness of 100 nm (a) and 1000 nm (b), respectively. The ground truth is measured with a quarter-waveplate, a rotating polarizer, and a conventional grating-based spectrometer. Comparison among the ellipsometry parameters Ψ and Δ from the single-shot spectroscopic ellipsometer (blue solid line), the ground truth (red dashed line), and the theoretical estimation (orange dots) for SiO2 thin film with a thickness of 100 nm (c) and 1000 nm (d), respectively. The ground truth is measured with a quarter-waveplate, a rotating polarizer, and a conventional grating-based spectrometer. e Comparison of the reconstructed thickness from the single-shot spectroscopic ellipsometer with the ground truth thickness from the commercial spectroscopic ellipsometer for five SiO2 thin films under testing. f Comparison of the reconstructed refractive index (red dots) from the single-shot spectroscopic ellipsometer with the ground truth (blue grids) from fused silica refractive index data in commercial spectroscopic ellipsometer for five SiO2 thin films under testing

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