Fig. 6: Controlled by multiple state of light and bias current.
From: Reconfigurable memlogic long wave infrared sensing with superconductors
a I-V curve for device under light illumination with intensity of \(0,1\) (\(0.19\,{\rm{mW}}\,{{\rm{cm}}}^{-2}\)), 2 (\(0.38\,{\rm{mW}}\,{{\rm{cm}}}^{-2}\)) and \(3(0.65\,{\rm{mW}}\,{{\rm{cm}}}^{-2})\) at \(6.5\,{\rm{K}}\). The zone of A2, B2, C2, D2 and E2 represent bias current \(68\,{\rm{\mu }}{\rm{A}} < {I}_{{Bias}} < 75\,{\rm{\mu }}{\rm{A}}\), \(75{\rm{\mu }}{\rm{A}} < {I}_{{Bias}} < 96\,{\rm{\mu }}{\rm{A}}\), \(96\,{\rm{\mu }}{\rm{A}} < {I}_{{Bias}} < 103\,{\rm{\mu }}{\rm{A}}\), \(103\,{\rm{\mu }}{\rm{A}} < {I}_{{Bias}} < 135\,{\rm{\mu }}{\rm{A}}\) and \(135\,{\rm{\mu }}{\rm{A}} < {I}_{{Bias}} < 144\,{\rm{\mu }}{\rm{A}}\), respectively. b Truth table for device under the operation of A2, B2, C2, D2 and E2, respectively. c Output of resistance under the operation of A2, B2, C2, D2 and E2. d The input light image with four states of light intensity. e The different output image of device under the different reading current and different direction of light signal transmission
