Fig. 2: Material characterizaiton of pristine WS2 and N-WS2. | Light: Science & Applications

Fig. 2: Material characterizaiton of pristine WS2 and N-WS2.

From: Spatially selective p-type doping for constructing lateral WS2 p-n homojunction via low-energy nitrogen ion implantation

Fig. 2

a OM image of lateral WS2 p-n homojunction. The region within the square frame is the N-ions implanted region. The remaining region are unimplanted region. The scale bar is 20 μm. b Raman spectra and (c) PL spectra of pristine WS2 (blue curve) and N-WS2 (red curve) on the same sample. d AFM image of the implanted region and unimplanted region on the same sample, among the white dotted line is the dividing line. The height profiles insert show that the WS2 flake thickness in both regions are ~5 nm. e The contrastive KPFM mapping of the WS2 lateral p-n homojunction. The scale bar is 3 μm. f The surface potential difference of WS2 lateral p-n homojunction marked with the red line in e. The difference value is ~75 mV

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