Fig. 4: Electrical performance of pristine WS₂ and N-WS₂.

a OM image of the as-fabricated WS₂ devices. Below the white dotted line is the implanted region, while above the white dotted line is the unimplanted region. The sample is divided into three parts denoted as channel 1-2 (N-WS₂), channel 2-3 (lateral WS₂ p-n homojunction), and channel 3-4 (pristine WS₂). The scale bar is 10 μm. b Output characteristic curves of N-WS₂ FET at gate voltage sweep from 0 V to −60 V with −20 V step. Output characteristic curves of (c) WS₂ FET and (d) lateral WS₂ p-n homojunction FET at gate voltage sweep of 0 V to 60 V with 20 V step. e Transfer characteristic curves of WS₂ and N-WS₂ (with implantation dose of 1 × 10¹⁴ions cm⁻²) FETs at bias of 1 V in logarithmic scale. f Transfer characteristic curves comparison of WSe₂ (blue curve) and N-WSe₂ (red curve) FETs at bias of 1 V in logarithmic scale