Fig. 6: Photoelectric performance of the WS₂ lateral p-n homojunction.

a Schematic illustration of photodetector based on lateral WS₂ p-n homojunction. b Output characteristic curves of lateral WS₂ p-n homojunction under 532 nm illumination with different light power densities. c The magnified output characteristic curves of lateral WS₂ p-n homojunction at gate voltage of 0 V under dark and 532 nm illumination (1.7 mW cm⁻²). d The energy band diagram of lateral WS₂ p-n homojunction. e Rise and (f) fall time curve of transient photo-response under 532 nm illumination (4.96 mW cm⁻²) at bias of 1 V. g Transient photo-response of lateral WS₂ p-n homojunction under 532 nm illumination with different light power densities at bias and gate voltage of 0 V. h Output characteristic curves of lateral WS₂ p-n homojunction under different wavelength illumination of 445 nm, 532 nm, and 638 nm (4.1 mW cm⁻²). i Light power density dependence relation curves of responsivity and detectivity