Fig. 2
From: Ultrasensitive photoelectric detection with room temperature extremum
Characterization of the temperature-dependent photoelectric performance of the Ta2NiSe5 device. a Schematic structure of the Ta2NiSe5 device. b Temperature-dependent photovoltage of the device under irradiation in the 0.22–0.30 THz wave range. c Temperature-dependent photovoltage of the device under laser irradiation at 635, 808, 980, and 1550 nm. d Comparison between ideal and experimental temperature-dependent noise of the device at a modulation frequency of 1 kHz. e Experimental and fitted photovoltage as a function of the modulated frequency under 0.14 THz radiation. Inset: time-resolved photovoltage of the device at 0.14 THz. f Under ambient operating conditions, the optimal D* values of the Ta2NiSe5 device in various terahertz wave ranges
