Fig. 2: Energy Band Evolution and Nonlinear Spectral Characteristics in the Photonic Memristor.

a Normalized relative potential distribution across the device’s transport channel, shown via Kelvin Probe Force Microscopy (KPFM) measurements. Sequences i-iv demonstrate the memristor’s state initialization at various voltage pulses from 40 V to -40V, revealing potential redistribution. b Simulated potential evolution within the device, showcasing the extensive modulation capability as the top WSe₂ layer transitions from p-type doping at 10¹⁶ cm⁻³ to n-type doping at 10¹⁷ cm⁻³. c TCAD simulation illustrating the evolution of polarity within the space charge region, transitioning from n-doped at 40 V pulsing to p-doped at -40V pulsing, thereby demonstrating the adaptability of the top p-type WSe₂ layer. d Local charge density in WSe₂, with Pd ion doping concentrations set at 0%, 2.58%, 5.12%, 7.63%, and 10.11%, respectively. e Variation in work function as a function of doping concentration. f Scanning Electron Microscope (SEM) images of the device (i) with and (ii) without the memristor structure. Channel numbers are labeled inside. g Distribution of Pd ions across channels 1, 2, 3, and 4 of the memristor (i) and non-memristor device (ii) after preprocessing with voltage pulses at 40 V, 20 V, -20V, and -40V