Fig. 2: Reconfigurable optoelectronic output of the PD-RRAM cell.

a Current–voltage characteristics of the PD connected in series with R₀ in the dark (black line) and under illumination (red line) in the detecting mode. b Current–voltage characteristics of the RRAM connected in series with R₀ under DC sweeping voltage with a SET compliance current (I_CC) of 100 μA in the writing mode. The gray lines show 20 reliable switching cycles of an individual RRAM. The transited current states during SET (or RESET) indicated by red (or blue) lines are shown. c One-cycle linearly modulated depression (blue) and potentiation (red) behaviors as functions of the number of RESET pulses of −3.5 to −3.9 V and SET pulses of 1.5 to 4.1 V for 10 ns. The inset shows varying voltage amplitude results in multi-resistance states for SET and RESET. d Illustration of the I_out when PD-RRAM cells are operated in the reading mode with LED illumination. e Dependence of the I_out with varying resistance states of RRAMs, with LED light intensity increasing from 0 to 10 mW cm⁻². f Fitting of the I_out collected in e