Fig. 1: The working principle and application schematics of the proposed ASPD system.

a Traditional polarized detection process illustrated in a block diagram. b Overview of the existing 2D materials-based polarized photodetectors and their limitations. These include: (i) Anisotropic 2D materials. The inset shows a typical schematic structure of the anisotropic 2D material. (ii) Heterojunction construction. (iii) Coupling with anisotropic nanostructures. This method introduces polarization through anisotropic absorption or field enhancement via localized surface plasmon resonance (LSPR) of nanostructures. The red coordinate illustrates the relationship between resonance wavelength, denoted by λ, and processing difficulty, denoted by η. The fixed size of nanostructures features a specific resonance wavelength with a finite spectral width, with broader wavelengths correlating to increased processing complexity. c (i) Schematic of the ASPD system integrating polarization-sensitive WSe₂-based photodetector and MoS₂-based field-effect transistor. In this schematic, PD denotes a WSe₂-based photodetector, FET denotes a MoS₂-based transistor, and Resistor denotes a reference resistor. The right top panel indicates that polarization sensitivity arises from hot electron injection. The bottom panel depicts the output signals of the ASPD system that vary with the incident polarization angle. (ii) Application schematics of the ASPD system in imaging and optical communication, showcasing its versatility