Fig. 1: Optoelectronic characterization of the Ta2NiSe5/SnS2 device.

a Output curves (I_DS–V_DS) in the dark and under illumination with different powers. The incident light is at 532 nm wavelength and V_G = 0 V. b Time-resolved photoresponse of the Ta₂NiSe₅/SnS₂ device at V_DS = −3 V. The incident light is at 532 nm wavelength and V_G = 0 V. The gray part represents the light pulses applied to Ta₂NiSe₅/SnS₂ device. c Transfer curves (I_DS–V_G) in dark and under illumination with different power. The incident light is at 532 nm wavelength and V_DS = −1 V. d Band diagrams of the junction under light illumination. e Band diagrams of the junction after light illumination. f Photocurrents at V_DS = −3 V under lasers from 375 to 1310 nm with various light intensities. All test results are from four parallel tests, data points and plot lines are the mean of the four results, error bars and error bands represent the standard deviation of the four results