Fig. 3: The optoelectronic tunability of long-term plasticity. | Light: Science & Applications

Fig. 3: The optoelectronic tunability of long-term plasticity.

From: Physisorption-assistant optoelectronic synaptic transistors based on Ta2NiSe5/SnS2 heterojunction from ultraviolet to near-infrared

Fig. 3

a Dependence of the EPSC triggered by 30 optical pulses on various back-gate voltages. The bias voltage (VDS), wavelength, duration, and power of the optical pulses are −3 V, 635 nm, 200 ms, and 13.26 μW. b LTP/LTD characteristics. Light and voltage pulses for LTP and LTD are depicted in the figures. Photonic pulses conditions of the Ta2NiSe5/SnS2 device are 635 nm, 13.26 μW power, 200 ms width. c Dependence of the gain of EPSC (A30/A1) on the pulse frequency. The wavelength, duration, and power of the optical pulses are 635 nm, 200 ms, and 13.26 μW. d Schematic illustration of Pavlov’s dog experiment and the neural circuit of associative learning. Classical Pavlovian conditioning under e one and f five training (E + L)

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