Fig. 2
From: Operando ZnO recrystallization for efficient quantum-dot light-emitting diodes
Electron transport properties of the ZnO NP films. a, b J‒V characteristics of Al/ZnO/Al devices (a) without acid treatment and (b) with acid treatment at different temperatures. The symbols represent the experimental results, with colors corresponding to the measurement temperatures. c A schematic diagram of the device structure ITO/QDs/ZnO/Al and its working mechanism for measuring electron mobility in ZnO. d TrEL spectra of ITO/QD/ZnO/Al devices at different temperatures. e Temperature-dependent mobility of a ZnO film with acid treatment. f Plot of \(\left[{I}_{0}-{I}_{{EL}}\left(t\right)\right]/{I}_{0}\) as a function of time, with the green line representing the fitted curve
