Fig. 1: Steady state device characteristics
From: Efficient on-chip terahertz generation and detection with GaN photoconductive emitters
a Cross section of the devices with planar 60 nm thick Au contacts on a 4-µm-thick si-GaN substrate grown on sapphire. b A schematic illustration (see Fig.S1a for a microscope image) of a co-planar stripline device with a 3 µm photoconductive gap. The stripline is illuminated with an elliptical UV pulse (purple ellipse) (frep =75.6 kHz, λ = 360 nm, tpulse = 250 fs) which drives the photocurrent (Iph) under an applied bias (V). c Current-voltage characteristics of the device under illumination at 4 different incident optical powers. d Photocurrent at 50 V as a function of optical power shows a linear dependence
