Fig. 4: Terahertz generation characteristics of strip-line waveguides on GaN.
From: Efficient on-chip terahertz generation and detection with GaN photoconductive emitters
a Terahertz pulse traces at Vbias = 35 V measured as a function of absorbed pump intensity. Traces are each offset by 10 V for clarity. The shaded regions around each time trace correspond to the uncertainty in the field measurements estimated using run-to-run variations in the data. b The average terahertz power in the pulse as a function of absorbed intensity in 3 ps (yellow) and 15 ps of the pulse (gray). c Power density spectrum at Poptical = 1 µW and Vbias = 35 V (gray circles). The noise floor is experimentally determined using measurements at Poptical = 0 µW and Vbias = 35 V (yellow squares)
