Fig. 6
From: Shaping the light of VCSELs through cavity geometry design
Polarization-dependent near-field patterns and RF spectrum characteristics of VCSELs with various cavity geometries. Near-field emission patterns of each VCSEL geometry captured without a polarizer (a) and with a polarizer set at angles of 0° (b), 45° (c), and 90° (d). e Angular dependence of the optical power, demonstrating the polarization preference of the VCSELs with respect to the crystal orientation of the 940-nm wafer. f Averaged orthogonal polarization suppression ratio (OPSR) for each VCSEL geometry, showing the degree of polarization control provided by each design. g Normalized integrated RF spectrum for each geometry, calculated from time-domain signals under DC conditions at maximum power, serving as an indicator of signal instability
