Fig. 3: BNP detection results based on AlGaN/GaN sensor with Au gate membrane (Device A). | Microsystems & Nanoengineering

Fig. 3: BNP detection results based on AlGaN/GaN sensor with Au gate membrane (Device A).

From: Low limit of detection of the AlGaN/GaN-based sensor by the Kelvin connection detection technique

Fig. 3

a Change of IDS output of Device A with the surface functionalization process. b RDS-t baseline comparison (VDS = 0.4 V) between the Kelvin connection test and the traditional two-probe test. c RDS-4probe-t and RDS-2probe-t response to BNP with concentrations ranging from 0.1 ppt to 10 ppb using Device A as the transducer and anti-BNP immobilized on the Au gate. d ΔRDS results of BNP detection.

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