Fig. 4: The experimental results of the gate leakage current IG and RDS background noise of the AlGaN/GaN sensors.
From: Low limit of detection of the AlGaN/GaN-based sensor by the Kelvin connection detection technique
a–e are the baseline tests of Device B with different VG biases; the packaging material is PI/SiNx/SiO2. RDS is the Kelvin connection test resuts and IG is the gate leakage current through the reference electrode. RDS and IG were measured simultaneously with a VG = 0 V, b VG = − 2 V, c VG = − 3 V, d VG = − 3.5 V, e VG = − 3.8 V. f Baseline test of Device B with VG = 0 V; the packaging material is SiNx/SiO2.
