Fig. 3: CAD rendering of the analog resistance mode test chip.
The device was fabricated using micromilling in Polymethylmethacrylate, as reported previously22, and consisted of 36 cFET structures arranged in parallel between two large distribution channels with inlets A to D. The trigger channel volume of each cFET incrementally increases from right to left to create a full range of occluding bubble states. Inset shows a close-up illustrating how the trigger channel volume was incrementally increased by lengthening the trigger channels
