Fig. 3: The working mechanism and electrical characterizations of the neuromorphic resistive memory device. | Microsystems & Nanoengineering

Fig. 3: The working mechanism and electrical characterizations of the neuromorphic resistive memory device.

From: Ionic liquid multistate resistive switching characteristics in two terminal soft and flexible discrete channels for neuromorphic computing

Fig. 3

a Basic mechanism schematic for the electrical manipulation of ion and liquid transport in the discrete channel. The I–V of b negative and c positive voltage sweep. The five cycles of triangular voltages with time on d negative and e positive voltage regions. f Plasticity characteristics of the artificial synapse with different pulse widths of 400 μs, 600 μs, 800 μs, and 1 ms. g The different pulse amplitude responses at 1.5, 1.2, 0.9, 0.7, and 0.3 V. h Frequency response at 1.1, 2.4, 4.6, and 7.8 Hz. i The STM retention of the neuromorphic device

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