Fig. 4: The electric-thermal transfer model of the GST225 temperature changes over time within the microring cavity.
From: Tunable parity-time symmetry vortex laser from a phase change material-based microcavity
a Temperature of the GST225 dielectric layer in the ring cavity. The AD-AM GST225 dielectric layer is electrically heated above \({T}_{C}=\) 469 K, enabling it to convert into crystalline GST225 under \({V}_{g}=\)1 V. The \({V}_{g}=\) 25 V is used to heat the crystalline GST225 above \({T}_{M}=\) 803 K. The melt-quenched (MQ) phase of GST225 results from subsequent quenching. The temperature distributions of the microring cavity at (b) 80 ns and (c) 125 ns where the color image presents the temperature values. The left and right columns display the temperature distributions at the x-y plane with \(z=\) 650 nm and for the 3D structure, respectively
