Fig. 5: Base capacitance and pull-in.
From: Highly-sensitive wafer-scale transfer-free graphene MEMS condenser microphones
a C0 – Vbias curves of the three geometries are compared with FEA results. The devices are driven with VAC = 100 mV and f1 = 100 kHz. b C0 – Vbias linear sweep from −9.5 V to 9.5 V describes the asymmetric membrane displacement of geom. b, d The blue numbers describe the membrane dynamics under Vbias increase of the inspected Geom. A device (also in Movie 2, Supp. mat. for geom. C). c Both electrodes are driven with a Vbias linear sweep from 0 V to 8 V. Despite the partial membrane collapse at Vbias = 3.8 V, no short circuits are found due to a residual TEOS thin layer (geom. A). d Membrane deflection under non-uniform electrostatic forces
