Fig. 2: Device fabrication and characterization.
From: Organic-inorganic hybrid piezotronic bipolar junction transistor for pressure sensing
a Schematic of the fabrication steps of the n-p-n structure in which a p-type polymer is sandwiched by two n-type piezoelectric semiconductor materials, with thickness differentiation between the layers. b XRD image of PBJT showing the orientation of wurtzite crystals of ZnO. The two piezoelectric semiconductor layers of ZnO at the top and bottom are labeled as the emitter, and the collector respectively. c SEM cross-sectional view of the fabricated device
