Fig. 3: Energy band diagrams, and working mechanism of the piezotronic bipolar junction transistor along with its electrical and capacitance-resistance (c–r) equivalent circuits.
From: Organic-inorganic hybrid piezotronic bipolar junction transistor for pressure sensing
a Schematic illustration of the working mechanism of the device and the conduction band level under no stress, (b) under applied stress, and (c) under applied stress and holding. Piezoelectric-induced electrons flow from Cu to ITO, where a new equilibrium state is created in which the piezoelectric potential is screened by free carriers in the ZnO film. d Electrical equivalent circuit diagram of the n-p-n structure including two pieztronic diodes back to back. e Small-signal equivalent circuit of the PBJT (c-r)
