Table 1 Comparison of piezoelectric modulated FET sensing state-of-the-arts and piezotronic diode-based devices46,47,48,49,50

From: Organic-inorganic hybrid piezotronic bipolar junction transistor for pressure sensing

  1. Str* = Structure, Flex* refers to flexibility, Fab* stands for fabrication, Int* implies integration process in terms of circuits and system approach, EX.P.S* = External power source, APP* = Application, SENS* = Sensitivity, Charge generation is abbreviated as C.G*, NG*refers to nanogenerator, TW = This Work
  2. 1= Pure piezoelectric material,
  3. 2= Piezotronic P-N junction
  4. 3= Piezotronic n-p-n transistor
  5. 4= Piezoelectric modulated field effect transistor
  6. 5= Piezolectric gated dual-gate thin film transistor N. P. S = n-type piezoelectric semiconductor, P-POL. = p-type polymer, P and F are applied pressure or force respectively.
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