Fig. 6: Fabrication process steps for LiNbO3-based A1-mode LWR filters. | Microsystems & Nanoengineering

Fig. 6: Fabrication process steps for LiNbO3-based A1-mode LWR filters.

From: 6 GHz lamb wave acoustic filters based on A1-mode lithium niobate thin film resonators with checker-shaped electrodes

Fig. 6

Fabrication process of the A1-mode LWR filter based on the Z-cut LiNbO3 thin film. a LiNbO3 wafer. b SiO2 layer is deposited and etched. c LiNbO3 is partially etched to obtain the frequency shift between the series and shunt resonators. d The Mo layer is deposited and patterned. e SiO2 layer is prepared for the lift-off process of Au. f SiO2 layer is etched. g The Au layer is formed to reduce ohmic loss. h SiO2 layer as a protective layer is formed. i The SiO2 layer on the back-side wafer is deposited as a hard mask for the Si etching. j The substrate is etched to define the device. k The device is released by a wet etching process

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