Fig. 3: Electromechanical behavior of flexible MoxW1-xS2 strain sensors at room temperature. | Microsystems & Nanoengineering

Fig. 3: Electromechanical behavior of flexible MoxW1-xS2 strain sensors at room temperature.

From: Pulsed laser-assisted direct fabrication of MoxW1-xS2 alloy-based flexible strain sensors with superior performance for high-temperature applications

Fig. 3

a The normalized resistance of the strain sensor under compressive and tensile strains induced by inward bending and outward bending, respectively. Insets show the schematic of two bending modes. b Normalized resistance as a function of applied microstrains. The resistances are extracted from the values in (a) and averaged with a standard deviation. c Programmable and instantaneous resistance variation to different strains from 49 to 392 με during bending and releasing in compressive and tensile fashions. A holding time of 20 s was used at each strain value. All the tests were conducted at room temperature (20 °C). d Dynamic cyclic test of the strain sensor at a strain of 294 με for over 1000 cycles

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