Fig. 2: Device structure characterization. | NPG Asia Materials

Fig. 2: Device structure characterization.

From: Ultrafast and sensitive photodetector based on a PtSe2/silicon nanowire array heterojunction with a multiband spectral response from 200 to 1550 nm

Fig. 2

a Schematic diagram of the device structure. b SEM images of as-prepared SiNWA array, where the inset shows the corresponding plane view of the nanoarray. c Height profile of the PtSe2 film; the inset shows the corresponding AFM image. d, e TEM images of the PtSe2 film under different magnifications and cross-sectional TEM image of the PtSe2 film (inset of (d)). f High-resolution TEM image of PtSe2, where the distance between two layers is approximately 0.52 nm

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