Table 1 Performance comparison of our PtSe2/n-SiNWA heterostructure photodetector with that of other 2D material-based photodetectors
Materials and devices | R | τr/τr | Ilight/Idark | D* (Jones) | Spectral range (nm) | Ref. |
|---|---|---|---|---|---|---|
PtSe2/SiNWA heterojunction | 12.65 A/W | 10.1/19.5 μs | 4 × 104 | ~1013 | 200–1550 | This work |
GaSe/GaSb heterojunction | 115 mA/W | 32/24 μs | / | ~1012 | 400–1800 | |
InGaAs/p-Si heterojunction | 7.52 A/W | 13/16 ms | / | / | 400–1250 | |
MoS2/BP heterojunction | 153 mA/W | 15/70 μs | / | / | 532–1550 | |
Few-layer BP phototransistor | 4.8 mA/W | 1 /4 ms | / | / | 640–940 | |
Few-layer PtS2 phototransistor | 1560 A/W | 4.6/4.6 s | / | ~1011 | / | |
Graphene/Ge heterojunction | 51.8 mA/W | 23/108 μs | ~104 | ~1010 | 1200–1600 | |
Graphene/n-Si Schottky junction | 0.73 A/W | 320/750 μs | ~104 | ~1012 | 300–1100 | |
WS2/p-Si heterojunction | 5.7 A/W | 670/998 μs | ~101 | / | 340–1100 | |
Graphene-MoTe2-Graphene heterojunction | 110 mA/W | 24/46 μs | / | ~1010 | / | |
MoS2/n-Si heterojunction | 11.9 A/W | 30.5/71.6 μs | 59.9 | ~1010 | 300–1100 | |
MoS2/Graphene heterojunction | 835 mA/W | 20/30 ms | / | / | 420–980 |
