Fig. 4 | NPG Asia Materials

Fig. 4

From: Oxygen vacancy-assisted recovery process for increasing electron mobility in n-type BaSnO3 epitaxial thin films

Fig. 4

Comparison of the room temperature electron mobility vs. carrier concentration for our optimized LBSO films wet 0.5% H2-annealed at 950 °C (red stars) and previously reported LBSO films, i.e., PLD-grown LBSO thin films on an STO substrate11 (black squares), and on a single-crystal BSO substrate16 (green circles), MBE-grown LBSO thin films on an STO substrate13 (blue triangles, orange diamonds), and single-crystal LBSO38 (pink hexagons)

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