Fig. 2: Artificial synapses and analog data processing.
From: Next-generation ferroelectric domain-wall memories: principle and architecture
a In-plane PFM phase image of convergent and divergent BFO quad domains after different write voltages (left and right panels) with the appearance of conductive walls envisioned from the CAFM map (right panel) (adapted from Ma et al.14 copyright 2018, Macmillan Publishers Limited). b In-plane PFM phase image of switched polarization P when it initially intersected with applied electric field E at an angle α with the formation of conductive 71° walls envisioned from the CAFM map in the inset.16 The middle and right panels sketch the write voltage dependence of the readout wall current proportional to the switched domain number. c The conductance of a ferroelectric tunnel junction varies with the delay between pre-synaptic and post-synaptic spikes (adapted from Boyn et al.18 copyright 2017, Nature Publishing Group)
