Fig. 3
From: Spin transport in antiferromagnetic insulators: progress and challenges
a A schematic illustration of the spin Seebeck configuration for a YIG/Cr2O3/Pt trilayer device. A temperature gradient, ∇T, is along the z direction, while an external magnetic field (H) is along the y direction. b A cross-sectional TEM image of the YIG/Cr2O3/Pt trilayer device. The scale bar in the image is 5 nm. The out-of-plane direction z of the sample parallels the easy axis c of the Cr2O3. c The temperature dependence of the spin Seebeck voltage VSSE at H = 0.1 T for the YIG/Cr2O3/Pt trilayer device. The inset shows the concept for measuring spin-current transmissivity. The magnetic field is aligned in the film plane. d Temperature dependence of VSSE for the YIG/Cr2O3/Pt trilayer device at different external magnetic fields H at θ = 20°. e The Ts change ratio Ratio (Ts)@H due to the external magnetic fields H as functions of temperature. Here, Ratio (Ts)@H = (VSSE@H − VSSE@0.5T)/VSSE@0.5T. Ts refers to the spin-current transmissivity in the Cr2O3 layer
