Fig. 4
From: Spin transport in antiferromagnetic insulators: progress and challenges
a–c The illustrations for the magnetoresistance measurement configuration for magnetic field angle scan in different planes. Parameters α, β, and γ are the field angles defining the H directions when H is applied in the x–y, x–z, and y–z planes, respectively. d, e Field angle dependent resistance measured for the Pt/NiO/YIG device at 260 and 20 K with |H| = 20,000 Oe, which shows positive and negative SMR, respectively. f Illustrations for the interpretation of the sign change of the SMR in the Pt/NiO/YIG device; please see the main text for details. g, h SMR detection of the current-driven 90° rotation of the Néel vector in Pt/NiO/SrTiO3(001) and Pt/NiO/Pt/MgO(111) structures. g Adapted from36. h Adapted from the ref. 37
