Fig. 2: Modulation of electrical conductances by ion implantation. | NPG Asia Materials

Fig. 2: Modulation of electrical conductances by ion implantation.

From: Enhanced analog synaptic behavior of SiNx/a-Si bilayer memristors through Ge implantation

Fig. 2

Characteristic current–voltage curves of a an SiNx/a-Si bilayer memristor device and b an a-Si single layer device with and without implantation. The voltage was swept repetitively following the sequence 0 → +5 → 0 → −5 → 0. c XTEM image of an implanted a-Si on a p++ crystalline Si wafer. d Ge and defect (vacancy) distributions simulated by TRIM, and Ge atomic fraction determined by EDX.

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