Fig. 6: Synpatic potentiation and depression.
From: Enhanced analog synaptic behavior of SiNx/a-Si bilayer memristors through Ge implantation
a Conductance updates of the unimplanted device with varying number of pulses (50, 100, 200, 500). The write voltages in potentiation and depression were 7.0 and −3.0 V, respectively. The read voltage was 2.0 V in both modes. b Conductance updates of the implanted device with the same numbers of pulses. The write and read voltages were 7.0 and −3.0 V. The read voltage was 1.0 V in both modes. c Repetitive potentiation and depression curves with 100 repetitive pulses in each mode. The write voltages were 7.0 and −4.0 V in potentiation and depression, respectively. The read voltage was 1.0 V in both modes. The potentiation and depression curves of every tenth cycle are presented. In all cases, the pulse width was set to 10 ms.
