Fig. 7: Long term memory retention time.
From: Enhanced analog synaptic behavior of SiNx/a-Si bilayer memristors through Ge implantation
a Selected conductance decay curves after repetitive voltage (7.0 V) pulses with a 100-ms width for the unimplanted and implanted devices. The applied number of pulses was 500 for the unimplanted device and was 50, 100, 500, and 1000 for the implanted device. b Retention time constants extracted from the conductance decay curves for the unimplanted and implanted devices with varying voltage amplitude (5.0, 6.0, 7.0 V) and number of pulses. The voltage pulse width was set to 100 ms.
