Fig. 8: Proposed operation mechanism.
From: Enhanced analog synaptic behavior of SiNx/a-Si bilayer memristors through Ge implantation
Schematics of Ag nanoclusters in the SiNx layer immediately after potentiation with multiple voltage pulses of the a unimplanted devices and b implanted devices. Schematics of Ag nanoclusters at a time comparable to the short time constant (τshort) after voltage pulses are removed for the c unimplanted and d implanted devices.
