Table 1 Nonlinearity factors and on/off ratios of the unimplanted and implanted devices.
From: Enhanced analog synaptic behavior of SiNx/a-Si bilayer memristors through Ge implantation
Number of pulses | Unimplanted device | Implanted device | ||||
|---|---|---|---|---|---|---|
Nonlinearity factor | On/off ratio | Nonlinearity factor | On/off ratio | |||
Potentiation | Depression | Potentiation | Depression | |||
50 | 4.32 | −10.94 | 1.07 | 2.61 | −7.08 | 8.80 |
100 | 4.08 | −14.99 | 1.08 | 2.82 | −5.78 | 9.77 |
200 | 6.12 | −21.87 | 1.11 | 2.83 | −6.85 | 12.87 |
500 | 12.43 | −28.86 | 1.14 | 3.10 | −6.27 | 13.50 |
