Fig. 2: Field-Effect Transistors of PbS QD assemblies. | NPG Asia Materials

Fig. 2: Field-Effect Transistors of PbS QD assemblies.

From: On-demand tuning of charge accumulation and carrier mobility in quantum dot solids for electron transport and energy storage devices

Fig. 2

a Schematic and optical micrograph of the solid-gated FET with a 230nm SiO2 dielectric. b Comparison of the ID-VG transfer characteristics of the PbS QD FETs prepared with three different deposition methods: spin-coating, dip-coating, and liquid/air interfacial assembly. The transfer characteristics are obtained from the linear operation regime. c Logarithmic plots of the ID-VG transfer characteristics (linear regime, (|VD|= 2V)) to emphasize the current modulation ratio of each sample. While transistors prepared by both spin-coating and liquid/air interfacial assembly demonstrate ambipolar transport characteristics, dip-coated transistors show an anomaly in that their electron transport is suppressed.

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