Fig. 3: Mimicking the synaptic function using ion migration. | NPG Asia Materials

Fig. 3: Mimicking the synaptic function using ion migration.

From: Control of electrical resistance and magnetoresistance by electric-field-driven oxygen ion migration in a single GdOx wire

Fig. 3

Longitudinal resistance (Rxx) with repeated switching of the current (I) direction under a current of a 1mA (E=0.55×105V/m), b 2mA (E=1.1×105V/m), or c 3mA (E=1.6×105V/m) in the SiNx (3nm)/GdOx (10nm) device. When Rxx<RLOWER=3.00kΩ or Rxx>RHIGH=3.06kΩ was met, the current direction (electric field polarity) was switched.

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