Fig. 4: Estimation of the Schottky barrier height (SBH).
From: Approaching barrier-free contacts to monolayer MoS2 employing [Co/Pt] multilayer electrodes
Bias voltage (VDS) dependence of the slope (−EA/1000kB) obtained from the Arrhenius plots at Vg = 0 V for a device A and b device B. c, d The Vg dependence of the SBH and extraction of the flat-band SBH (e\(\phi\)FB) for FET devices A and B, respectively. The point of deviation from a linear dependence gives the flat-band SBH. The shaded region is where thermionic emission predominantly contributes to the current, whereas the nonshaded region represents an increasing contribution from tunneling carriers.
