Fig. 1: MoS2 flash memory using a PEDOT:PSS floating gate.
From: Multifunctional molybdenum disulfide flash memory using a PEDOT:PSS floating gate
a Three-dimensional schematic illustration of MoS2 flash memory using a PEDOT:PSS floating gate. b Molecular structure of PEDOT:PSS. c Optical microscope image of fabricated MoS2 flash memory. Scale bar is 20 μm. d Transfer characteristics showing negligible hysteresis of the MoS2 transistor without the PEDOT:PSS floating gate under forward and reverse gate bias sweeps at VD = 1 V. e Transfer characteristics of MoS2 flash memory with a PEDOT:PSS floating gate. f Endurance of MoS2 flash memory. ID plot under the programmed state (red dot) and erased state (blue dot) for 1000 consecutive sweep cycles. One cycle consists of a program and erase voltage sweep from −60 V to 60 V and from 60 V to −60 V at VD = 1 V. Endurance of the ID switching ratio (Ierase/Iprogram) as a function of 1000 consecutive sweep cycles (bottom). Energy band diagram of the MoS2 memory device with a PEDOT:PSS floating gate for g programming and h erasing operation. i Retention characteristics of the MoS2 memory device with a PEDOT:PSS floating gate under programmed and erased states. The memory device was programmed at VC = 30 V and erased at VC = − 30 V. j Retention characteristics of the extrapolated line on a double logarithmic scale.
