Fig. 5: Multilevel data storage characteristics of MoS2 flash memory under various photoinduced programming conditions.
From: Multifunctional molybdenum disulfide flash memory using a PEDOT:PSS floating gate
a Schematic diagram of measurement conditions depending on various light illumination under programming operation. b Multilevel retention characteristics of blue photoinduced programming with different light intensities at VD = 0.1 V. c Average resistance in the retention measurement until 400 s at VD = 0.1 V as a function of the incident power density (Pinc). d Average resistance in red, green, and blue retention measurements until 400 s at VD = 0.1 V as a function of the excitation wavelength (λex).
