Fig. 2: Selective oxygen annealing method and improved insulating properties. | NPG Asia Materials

Fig. 2: Selective oxygen annealing method and improved insulating properties.

From: Experimental realization of strain-induced room-temperature ferroelectricity in SrMnO3 films via selective oxygen annealing

Fig. 2

a–d Schematics of the selective oxygen annealing process including the interdigitated electrode (IDE) manufacturing process for the SMO thin films. a Tube furnace annealing of the SRO-capped SMO film on LSAT at a high temperature (600 °C) and an oxygen-rich atmosphere (O2 flow: 1.5 L/min in atmospheric pressure). b Typical photolithography process with an interdigitated photoresist (PR) pattern on the sample. c Selective etching of SRO on the SMO film using a NaIO4 solution. d Patterned SRO IDE on the SMO films after removing the PR pattern using an acetone solution. e Current density versus voltage curves and f dielectric loss (tan δ) versus voltage curves of the as-grown SMO (applied with processes b–d) and SOA-treated SMO films (applied with processes a–d) with thicknesses of 20 and 115 nm.

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