Fig. 5: Strain-induced ferroelectricity at room temperature. | NPG Asia Materials

Fig. 5: Strain-induced ferroelectricity at room temperature.

From: Experimental realization of strain-induced room-temperature ferroelectricity in SrMnO3 films via selective oxygen annealing

Fig. 5

a In-plane P–E loops for the SOA-treated SMO films with thicknesses of 20, 45, 69, 92, and 115 nm at 2 kHz. b Remnant polarization values according to the film thickness extracted from the P–E loops of panel a. c In-plane dielectric constants (εr = 138.1, 45.2, 14.5, 8.7, and 6.7) and dielectric losses (tan δ = 0.019, 0.079, 0.039, 0.028, and 0.015) of the SOA-treated SMO films with thicknesses of 20, 45, 69, 92, and 115 nm, respectively at 100 kHz. d Out-of-plane lattice parameters of the SOA-treated SMO films calculated based on the XRD data.

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