Fig. 4: Relationship between the structural and electronic properties in pressurized GaP bulk.
From: Two high-pressure superconducting phases in pressurized optical semiconductor GaP
The onset and zero-resistance transition temperature Tc’s are extracted from the R(T) curves. The blue and green symbols denote the data from the compression and decompression processes, respectively. The dashed lines below 6.5 GPa are guides to the eye. The colored areas indicate the different electronic state along with the different crystal structures, i.e., pristine low-pressure (LP) phase (cubic, S.G. F-43m, Z = 4), high-pressure (HP) phase (orthorhombic, S.G. Cmcm, Z = 2), and amorphous phase. The dashed gray area is correlated to the transformation between the HP and amorphous phase under decompression.
