Table 3 Respiratory sensors for respiratory pattern detection pattern.
Objective | Sensing material | Synthesis method | Sensor performance | Ref. |
---|---|---|---|---|
RH | PU/ACNTs NFs | ultrasonication | 5,11,16,20,29 with the RH of 11,33,59,75,95% | |
ZnO/Ti/PTFE | hydrothermal method, layer by layer coating | 1.8,13.9,28,44.8,85% with the RH of 50,60,70,80,90% | ||
LIG/ poly(ether-ether-ketone) | laser ablation, depositing, sputtering | R=1700kΩ/% RH | ||
SMPCF | Etch, self-assembly | Color changes with 0.02% RH | ||
Borophene–MoS2 | in situ van der Waals assembly | LOD>0.9736%RH, R= (0.245X-0.549)3 | ||
rGO/MoS2 | modified Hummer’s method, ultrasonication | LOD>0.0109%RH, R=28.4RH-127.0 | ||
Borophene–graphene | in situ thermal decomposition | Ln R=2.992ln (RH)-4.637 | ||
rGO/PDAC | Layer by layer assembly | R=0.00143x + 0.975 | ||
MoS2/LIG | laser ablation | R=8% (0−50%RH), R=80%(50−100%RH) | ||
Strain | rGO/CNTs | ultrasonic nanosoldering method | 34.69@1%strain, R=1.21 kPa−1 | |
MXene@spheres | wet-spinning, electrostatic assembly, spray-coating | R=174 (strain in 0-30%), 1187 (strain in 30-110%) | ||
PU/rGO/PDA/PFDT | Electrospinning, chemical methods | 2,9,50 with the strain of 20,50,100, respectively | ||
GO/CNT | Self-assembly, freeze-drying method | R=0.15 (strain in 0-50%), 0.58 (strain in 50-80%) | ||
PANI-gelatin | sol-gel | R=1.4 (strain in 0-764.4%) | ||
pressure | rGO/CNTs | ultrasonic nanosoldering method, | R=1.21 kPa−1 | |
nano carbon | drop casting method | R=31.63 kPa−1 (0-2 kPa) | ||
TPU/CB | screen-printing | R=5.205 kPa−1 (0-2 kPa), 0.63 kPa−1 (>1200 kPa) | ||
PVDF/ZnO NFs | Electrospinning, magnetron sputtering | R=3.12 mV /kPa | ||
MXene/rGO | freeze-casting, annealing polymerization | R=0.28 kPa−1(0-66.98 kPa) | ||
MXene ink-SF | dip-coating metho, screen-printing, etch | R=298.4kPa−1(1.4-15.7 kPa) 171.9kPa−1(15.7-39.3 kPa) | ||
CPDMS | Spraying, coating | R=124 kPa−1(2−200 Pa), 0.39 kPa−1(0.2−12 kPa), 0.02 kPa−1 (12−50 kPa) | ||
3D graphene | chemical vapor deposition | R=110 kPa−1(0−0.2 Pa), 3kPa−1(0.2−15 kPa), 0.26 kPa−1 (15−75 kPa) | ||
rGO/PC/W | Hydrothermal method, annealing | R=0.0122-0.41 kPa−1 (2-1200 kPa) | ||
a-PAN/G | Electrospinning, Annealing | R=44.5kPa−1(0−1.2 kPa) | ||
MXene/Fe3O4/graphene | thermal chemical vapor deposition, coating, etching | R=4.71 kPa−1 (0-62.5 kPa) | ||
Laser-reduced graphene oxide | Lasering | R=0.95 kPa−1 (0-14 kPa) |